1 power mosfet IRFB16N50K, sihfb16n50k features ? low gate charge q g results in simple drive requirement ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche voltage and current ?low r ds(on) ? lead (pb)-free available applications ? switch mode power supply (smps) ? uninterruptible power supply ? high speed power switching ? hard switched and high frequency circuits notes a. repetitive rating; pulse width limi ted by maximum junction temperature. b. starting t j = 25 c, l = 2.2 mh, r g = 25 , i as = 17 a. c. i sd 17 a, di/dt 500 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. product summary v ds (v) 500 r ds(on) ( )v gs = 10 v 0.285 q g (max.) (nc) 89 q gs (nc) 27 q gd (nc) 43 configuration single n -channel mosfet g d s to-220 g d s a v aila b le rohs* compliant ordering information package to-220 lead (pb)-free IRFB16N50Kpbf sihfb16n50k-e3 snpb IRFB16N50K sihfb16n50k absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 30 continuous drain current v gs at 10 v t c = 25 c i d 17 a t c = 100 c 11 pulsed drain current a i dm 68 linear derating factor 2.3 w/c single pulse avalanche energy b e as 310 mj repetitive avalanche current a i ar 17 a repetitive avalanche energy a e ar 28 mj maximum power dissipation t c = 25 c p d 280 w peak diode recovery dv/dt c dv/dt 11 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m www.kersemi.com
2 IRFB16N50K, sihfb16n50k notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. c. c oss eff. is a fixed capacitance that gi ves the same charging time as c oss while v ds is rising from 0 to 80 % v ds . thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -0.44 specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 500 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma - 0.58 - v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 3.0 - 5.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 500 v, v gs = 0 v - - 50 a v ds = 400 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 10 a b - 0.285 0.350 forward transconductance g fs v ds = 50 v, i d = 10 a 5.7 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz - 2210 - pf output capacitance c oss - 240 - reverse transfer capacitance c rss -26- output capacitance c oss v gs = 0 v v ds = 1.0 v, f = 1.0 mhz - 2620 - v ds = 400 v, f = 1.0 mhz - 63 - effective output capacitance c oss eff. v ds = 0 v to 400 v c - 120 - total gate charge q g v gs = 10 v i d = 17 a, v ds = 400 v b -6089 nc gate-source charge q gs -1827 gate-drain charge q gd -2843 turn-on delay time t d(on) v dd = 250 v, i d = 17 a, r g = 8.8 , v gs = 10 v b -20- ns rise time t r -77- turn-off delay time t d(off) -38- fall time t f -30- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --17 a pulsed diode forward current a i sm --68 body diode voltage v sd t j = 25 c, i s = 17 a, v gs = 0 v b --1.5v body diode reverse recovery time t rr t j = 25 c, i f = 17 a, di/dt = 100 a/s b - 490 730 ns body diode reverse recovery charge q rr - 5710 8560 nc forward turn-on time t on intrinsic turn-on time is neglig ible (turn-on is dominated by l s and l d ) s d g www.kersemi.com
3 IRFB16N50K, sihfb16n50k typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-so u rce v oltage ( v ) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v gs top 15 v 10 v 8 .0 v 7.5 v 7.0 v 6.5 v 6.0 v bottom 5.5 v 60 s pulse w idth tj = 25c 5.5 v 0.1 1 10 100 v ds , drain-to-so u rce v oltage ( v ) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse w idth tj = 150c 5.5 v v gs top 15 v 10 v 8 .0 v 7.5 v 7.0 v 6.5 v 6.0 v bottom 5.5 v 4 5 6 7 8 9 10 11 12 13 14 15 16 v gs , gate-to-so u rce v oltage ( v ) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 100 v 60 s pulse w idth -60 -40 -20 0 20 40 60 8 0 100 120 140 160 t j , j u nction temperat u re (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 17a v gs = 10 v www.kersemi.com
4 IRFB16N50K, sihfb16n50k fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area 1 10 100 1000 v ds , drain-to-so u rce v oltage ( v ) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0 v , f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 102030405060 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8 .0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 400 v v ds = 250 v v ds = 100 v i d = 17a 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 v sd , so u rce-to-drain v oltage ( v ) 0.10 1.00 10.00 100.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0 v 1 10 100 1000 10000 v ds , drain-to-so u rce v oltage ( v ) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operatio n i n this area limited by r ds (on) 100 sec tc = 25c tj = 150c single p u lse www.kersemi.com
5 IRFB16N50K, sihfb16n50k fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transien t thermal impedance, junction-to-case fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms 25 50 75 100 125 150 t c , case temperat u re (c) 0 5 10 15 20 i d , d r a i n c u r r e n t ( a ) p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectang u lar p u lse d u ration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 si n gle pulse ( thermal respo n se ) n otes: 1. d u ty factor d = t1/t2 2. peak tj = p dm x zthjc + tc r g i as 0.01 t p d.u.t. l v ds + - v dd dri v er a 15 v 20 v i as v ds t p www.kersemi.com
6 IRFB16N50K, sihfb16n50k fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit 25 50 75 100 125 150 starting t j , j u nction temperat u re (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.6a 11a bottom 17a q gs q gd q g v g charge v gs d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + - www.kersemi.com
7 IRFB16N50K, sihfb16n50k fig. 14 - for n-channel p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs = 10 v* v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor current d = p.w. period + - + + + - - - * v gs = 5 v for logic level devices peak diode recovery dv/dt test circuit v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t. circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer r g www.kersemi.com
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